1n5221 to 1n5267 www.vishay.com vishay semiconductors rev. 2.1, 08-sep-14 1 document number: 85588 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal zener diodes features ? silicon planar power zener diodes ? standard zener voltage to lerance is 5 % with a b suffix in the ordering code (e.g.: 1n5221b), suffix c is 2 % tolerance ? these diodes are also available in minimelf case with the type designation tzm5221 to tzm5267, sot-23 case with the type designations mmbz52 25 to mmbz5267 and sod-123 case with the types designations mmsz5225 to mmsz5267 ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? voltage stabilization primary characteristics parameter value unit v z range nom. 2.4 to 75 v test current i zt 1.7 to 20 ma v z specification thermal equilibrium int. construction single ordering information device name ordering code taped units per reel minimum order quantity 1n5221b to 1n5267b 1n5221b to 1n5267b-series-tr 10 000 per 13" reel 30 000/box 1n5221c to 1n5267c 1n5221c to 1n5267c-series-tr 1n5221b to 1n5267b 1n5221b to 1n5267b-series-tap 10 000 per ammopack (52 mm tape) 1n5221c to 1n5267c 1n5221c to 1n5267c-series-tap package package name weight molding compound flammability rating moisture sensitivity level soldering conditions do-35 125 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit power dissi pation t l ? 25 c p tot 500 mw zener current i z p tot /v z ma thermal resistance junction to ambient air i = 4 mm, t l = constant r thja 300 k/w junction temperature t j 175 c storage temperature range t stg -65 to +175 c forward voltage (max.) i f = 200 ma v f 1.1 v
1n5221 to 1n5267 www.vishay.com vishay semiconductors rev. 2.1, 08-sep-14 2 document number: 85588 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) based on dc measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) part number zener voltage range (1) test current reverse leakage current dynamic resistance f = 1 khz temperature coefficient v z at i zt1 i zt1 i zt2 i r at v r z z at i zt1 (1) z zk at i zt2 ? vz v ma a v ? %/k nom. max. max. max. typ. 1n5221 2.4 20 0.25 100 1 30 1200 - 0.085 1n5222 2.5 20 0.25 100 1 30 1250 - 0.085 1n5223 2.7 20 0.25 75 1 30 1300 - 0.08 1n5224 2.8 20 0.25 75 1 30 1400 - 0.08 1n5225 3 20 0.25 50 1 29 1600 - 0.075 1n5226 3.3 20 0.25 25 1 28 1600 - 0.07 1n5227 3.6 20 0.25 15 1 24 1700 - 0.065 1n5228 3.9 20 0.25 10 1 23 1900 - 0.06 1n5229 4.3 20 0.25 5 1 22 2000 0.055 1n5230 4.7 20 0.25 5 2 19 1900 0.03 1n5231 5.1 20 0.25 5 2 17 1600 0.03 1n5232 5.6 20 0.25 5 3 11 1600 0.038 1n5233 6 20 0.25 5 3.5 7 1600 0.038 1n5234 6.2 20 0.25 5 4 7 1000 0.045 1n5235 6.8 20 0.25 3 5 5 750 0.05 1n5236 7.5 20 0.25 3 6 6 500 0.058 1n5237 8.2 20 0.25 3 6.5 8 500 0.062 1n5238 8.7 20 0.25 3 6.5 8 600 0.065 1n5239 9.1 20 0.25 3 7 10 600 0.068 1N5240 10 20 0.25 3 8 17 600 0.075 1n5241 11 20 0.25 2 8.4 22 600 0.076 1n5242 12 20 0.25 1 9.1 30 600 0.077 1n5243 13 9.5 0.25 0.5 9.9 13 600 0.079 1n5244 14 9 0.25 0.1 10 15 600 0.082 1n5245 15 8.5 0.25 0.1 11 16 600 0.082 1n5246 16 7.8 0.25 0.1 12 17 600 0.083 1n5247 17 7.4 0.25 0.1 13 19 600 0.084 1n5248 18 7 0.25 0.1 14 21 600 0.085 1n5249 19 6.6 0.25 0.1 14 23 600 0.086 1n5250 20 6.2 0.25 0.1 15 25 600 0.086 1n5251 22 5.6 0.25 0.1 17 29 600 0.087 1n5252 24 5.2 0.25 0.1 18 33 600 0.088 1n5253 25 5 0.25 0.1 19 35 600 0.089 1n5254 27 4.6 0.25 0.1 21 41 600 0.09 1n5255 28 4.5 0.25 0.1 21 44 600 0.091 1n5256 30 4.2 0.25 0.1 23 49 600 0.091 1n5257 33 3.8 0.25 0.1 25 58 700 0.092 1n5258 36 3.4 0.25 0.1 27 70 700 0.093 1n5259 39 3.2 0.25 0.1 30 80 800 0.094 1n5260 43 3 0.25 0.1 33 93 900 0.095 1n5261 47 2.7 0.25 0.1 36 105 1000 0.095 1n5262 51 2.5 0.25 0.1 39 125 1100 0.096 1n5263 56 2.2 0.25 0.1 43 150 1300 0.096 1n5264 60 2.1 0.25 0.1 46 170 1400 0.097 1n5265 62 2 0.25 0.1 47 185 1400 0.097 1n5266 68 1.8 0.25 0.1 52 230 1600 0.097 1n5267 75 1.7 0.25 0.1 56 270 1700 0.098
1n5221 to 1n5267 www.vishay.com vishay semiconductors rev. 2.1, 08-sep-14 3 document number: 85588 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - thermal resistance vs. lead length fig. 2 - typical change of working voltage under operating conditions at t amb = 25 c fig. 3 - typical change of working voltage vs. junction temperature fig. 4 - total power dissipation vs. ambient temperature fig. 5 - temperature coefficient of v z vs. z-voltage fig. 6 - diode capacitance vs. z-voltage 95 9611 0 5 10 15 0 100 200 300 400 500 20 ll r thja - therm. resist. j u nction am b ient (k/ w ) i - lead length (mm) t l = constant 10 15 20 1 10 100 1000 v z - v oltage change (m v ) v z - z- v oltage ( v ) 25 95 9598 i z = 5 ma 0 5 - 60 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v ztn - relative voltage change t j - junction temperature (c) 240 95 9599 0 v ztn = v zt /v z (25 c) 0 tk vz = 10 x 10 -4 /k 8 x 10 -4 /k 2 x 10 -4 /k 6 x 10 -4 /k 4 x 10 -4 /k - 4 x 10 -4 /k - 2 x 10 -4 /k 0 120 160 0 100 300 400 500 600 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 200 95 9602 200 80 40 - 5 0 5 10 15 v z - z- v oltage ( v ) 95 9600 i z = 5 ma 0 10 203040 50 tk v z - temperat u re coefficient of v z (10 -4 /k) 10 15 0 50 100 150 200 c d - diode capacitance (pf) v z - z- v oltage ( v ) 25 95 9601 20 t j = 25 c v r = 2 v 0 5
1n5221 to 1n5267 www.vishay.com vishay semiconductors rev. 2.1, 08-sep-14 4 document number: 85588 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward current vs. forward voltage fig. 8 - z-current vs. z-voltage fig. 9 - z-current vs. z-voltage fig. 10 - differential z-resistance vs. z-voltage fig. 11 - thermal response 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 959605 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t j = 25 c 8 20 95 9604 0 20 40 60 80 100 i z - z-c u rrent (ma) p tot = 500 m w t am b = 25 c 046 12 v z - z- v oltage ( v ) 15 20 25 30 0 10 20 30 40 50 i z - z-c u rrent (ma) v z - z- v oltage ( v ) 35 95 9607 p tot = 500 m w t am b = 25 c 0 101520 1 10 100 1000 25 95 9606 t j = 25 c i z = 1 ma 5 ma 10 ma v z - z- v oltage ( v ) r z - differential z-resistance ( ) 5 1 10 100 1000 z thp - thermal resistance for p u lse cond. (k/ w ) t p - p u lse length (ms) 95 9603 10 -1 10 0 10 1 10 2 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 single p u lse r thja = 300 k/ w t = t j max. - t am b i zm = (- v z + ( v z 2 + 4r zj x t/z thp ) 1/2 )/(2r zj )
1n5221 to 1n5267 www.vishay.com vishay semiconductors rev. 2.1, 08-sep-14 5 document number: 85588 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): do-35_1n52xx 94 12648 re v . 1 - date: 19. decem b er 2011 doc u ment no.: s8- v -3906.04-031(4) 26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024] cathode identification 1.7 [0.067] 1.5 [0.059] 3.1 min. [0.120] ? 0.55 max. [0.022] ? 0.4 min. [0.015]
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